类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Last Time Buy |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (256 x 8) |
内存接口: | SPI |
时钟频率: | 10 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT28FW512ABA1HPC-0AATMicron Technology |
IC FLASH 512MBIT PARALLEL 64LBGA |
|
EDFM432A1PH-GD-F-R TRMicron Technology |
IC DRAM 12GBIT PARALLEL 168FBGA |
|
MT53B512M64D4NW-062 WT:DMicron Technology |
IC DRAM 32GBIT 1600MHZ |
|
MTFC16GLXDV-WT TRMicron Technology |
IC FLASH 128GBIT MMC 169VFBGA |
|
MT53E128M16D1DS-053 WT:AMicron Technology |
IC DRAM LPDDR4 WFBGA |
|
MTFC64GJVDN-ITMicron Technology |
IC FLASH 512GBIT MMC 169LFBGA |
|
CAT25640VI-GT3ESanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT SPI 8SOIC |
|
MT53B256M32D1NK-062 XT ES:CMicron Technology |
IC DRAM 8GBIT 1600MHZ FBGA |
|
MT53B512M64D4NW-062 WT ES:CMicron Technology |
IC DRAM 32GBIT 1600MHZ FBGA |
|
CY7C109B-1XW14Cypress Semiconductor |
IC SRAM ASYNC 1MBIT |
|
7134LA35JI8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 52PLCC |
|
CG9086AATCypress Semiconductor |
MICROPOWER SRAM |
|
70V06S25J8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |