English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 256Mb (16M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 143 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 5.4 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 54-TFBGA |
| 供应商设备包: | 54-TFBGA (8x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT29F512G08ELCDBG7-37ES:D TRMicron Technology |
IC FLASH 512GBIT PARALLEL 267MHZ |
|
|
AT21CS01-UUM0B-TRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 4WLCSP |
|
|
IS43DR16640B-25EBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 84TWBGA |
|
|
S99FL128S0001Cypress Semiconductor |
IC FLASH |
|
|
7015L25J8Renesas Electronics America |
IC SRAM 72KBIT PARALLEL 68PLCC |
|
|
MT53B4DCNQ-DC TRMicron Technology |
IC DRAM 200VFBGA |
|
|
MT29F2G16ABBFAH4:F TRMicron Technology |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
|
THGBMFG7C1LBAILToshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 128G MMC 153FBGA |
|
|
579287-001-00Cypress Semiconductor |
IC FLASH |
|
|
7005L25J8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
|
CG8638AMTCypress Semiconductor |
IC PSOC4 |
|
|
S29WS128N0PBFA0A0Cypress Semiconductor |
IC MEMORY NOR |
|
|
24AA01SC-I/WF16KRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ DIE |
