类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR4 |
内存大小: | 32Gb (1G x 32) |
内存接口: | - |
时钟频率: | 2.133 GHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.1V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 200-VFBGA |
供应商设备包: | 200-VFBGA (10x14.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT49BV3218T-11CIRoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48CBGA |
|
93AA86C/W15KRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ DIE |
|
16-3628-01Cypress Semiconductor |
IC GATE NOR |
|
7025S15PFIRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
MTFC64GJDDN-4M IT TRMicron Technology |
IC FLASH 512KBIT MMC 169LFBGA |
|
M36L0R7050T4ZAQF TRMicron Technology |
IC FLASH PSRAM 160M |
|
MT35XU01GBBA1G12-0AATMicron Technology |
IC FLSH 1GBIT XCCELA BUS 24TPBGA |
|
PC28F512M29EWLB TRMicron Technology |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
70V28VL20PFRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
MT29F256G08AUEDBJ6-12:D TRMicron Technology |
IC FLASH 256GBIT PAR 132LBGA |
|
7015S20JRenesas Electronics America |
IC SRAM 72KBIT PARALLEL 68PLCC |
|
CG8260AATCypress Semiconductor |
IC SRAM |
|
MT53D512M64D4BP-046 WT ES:EMicron Technology |
IC DRAM 32GBIT 1866MHZ FBGA |