类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 64Mb (16M x 4) |
内存接口: | SPI |
时钟频率: | 108 MHz |
写周期时间 - 字,页: | 8ms, 5ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S99-50283Cypress Semiconductor |
IC ANALOG MCD AUTO |
|
MT29F1G08ABAFAM78A3WC1Micron Technology |
IC FLASH 1GBIT PARALLEL WAFER |
|
592575-001-00Cypress Semiconductor |
IC FLASH |
|
71321LA45JI8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
CG8437AACypress Semiconductor |
IC SRAM SYNC 100TQFP |
|
M29F200FB5AN6E2Micron Technology |
IC FLASH 2MBIT PARALLEL 48TSOP |
|
MT53D512M64D8HR-053 WT ES:B TRMicron Technology |
IC DRAM 32GBIT 1866MHZ 366WFBGA |
|
PF48F4000P0ZTQEJMicron Technology |
IC FLASH 256MBIT PARALLEL 88SCSP |
|
MT53D512M32D2NP-046 AAT:D TRMicron Technology |
IC DRAM 16GBIT 2133MHZ 200WFBGA |
|
MT29F2G16ABAFAWP:FMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP |
|
7130SA35JIRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
ECF440AACCN-V6-Y3Micron Technology |
LPDDR3 4G DIE 128MX32 |
|
MT49H64M9BM-25:B TRMicron Technology |
IC DRAM 576MBIT PARALLEL 144UBGA |