类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 64Kb (4K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
MT53B512M64D8HR-053 WT ES:BMicron Technology |
IC DRAM 32GBIT 1866MHZ |
![]() |
CG8415AACypress Semiconductor |
ASYNC SRAMS |
![]() |
AT25SF041B-DWFAdesto Technologies |
IC FLASH 4MBIT SPI/QUAD WAFER |
![]() |
LH28F160BJE-BTL90Sharp Microelectronics |
IC FLASH 16MBIT PARALLEL 48TSOP |
![]() |
MT29F512G08CUCABH3-10:A TRMicron Technology |
IC FLASH 512GBIT PAR 100LBGA |
![]() |
MT53D384M64D4FL-046 XT ES:E TRMicron Technology |
LPDDR4 24G 384MX64 FBGA XT QDP |
![]() |
S99GL256P10TFI010Cypress Semiconductor |
IC FLASH MEMORY NOR |
![]() |
S99GL064ABCypress Semiconductor |
IC MEMORY NOR |
![]() |
MT53D4DHSB-DCMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
![]() |
S99JL064J70TFI000Cypress Semiconductor |
IC FLASH MEMORY NOR |
![]() |
IS43TR85120AL-107MBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |
![]() |
MT29C4G96MAAGBACKD-5 WT TRMicron Technology |
IC FLASH RAM 4GBIT PAR 137VFBGA |
![]() |
MTEDFBR4SCA-1P2ITMicron Technology |
IC FLASH SLC 4GB TSOP |