类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70V06L55J8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
|
IS46TR16512S2DL-125KBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 8GBIT PARALLEL 96LWBGA |
|
24AA02SC-I/W16KRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ DIE |
|
16-3696-01-TCypress Semiconductor |
IC GATE NOR |
|
70T633S10BFG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
AT49BV322AT-70CURoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48CBGA |
|
7133SA25JI8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
MT29F4G16ABAFAH4-AATES:F TRMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
MT42L128M32D1TK-25 AAT:A TRMicron Technology |
IC DRAM 4GBIT PARALLEL 134FBGA |
|
CG8206AACypress Semiconductor |
IC SRAM MICROPOWER |
|
MT29F4G01ABBFD12-AATES:F TRMicron Technology |
IC FLASH 4GBIT SPI 24TBGA |
|
PC28F00AG18FF TRMicron Technology |
IC FLASH 1GBIT PAR 64EASYBGA |
|
AT49BV163DT-70CURoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48CBGA |