English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Box |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 128Mb (16M x 8) |
| 内存接口: | SPI |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | 8ms, 2.8ms |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 24-TBGA |
| 供应商设备包: | 24-T-PBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CG8554AACypress Semiconductor |
MICROPOWER SRAMS |
|
|
MT29F4G16ABBDAM60A3WC1Micron Technology |
IC FLASH 4GBIT PARALLEL |
|
|
S99-50360Cypress Semiconductor |
IC FLASH |
|
|
MT53D1G64D8SQ-053 WT:EMicron Technology |
IC DRAM 64GBIT 1866MHZ 556VFBGA |
|
|
MT29VZZZAC8FQKSL-053 W.G8FMicron Technology |
ALL IN ONE MCP 3264G |
|
|
IS43R16160F-5BIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
|
S99MS01G20019Cypress Semiconductor |
IC FLASH NAND 775PIN |
|
|
MTFC32GAKAEEF-O1 AIT TRMicron Technology |
IC FLASH 256GBIT MMC 169TFBGA |
|
|
MTFC128GAOAMEA-WT ES TRMicron Technology |
IC FLASH 1TB MMC |
|
|
IS43TR85120AL-107MBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |
|
|
MTFC128GAOANAM-WT ESMicron Technology |
MASSFLASH/CONTROLLER 1T |
|
|
S99-50055-01Cypress Semiconductor |
IC MEMORY FLASH NOR |
|
|
MT46H64M32LFCX-48 IT:BMicron Technology |
IC DRAM 2GBIT PARALLEL 90VFBGA |
