类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Last Time Buy |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (256 x 8) |
内存接口: | SPI |
时钟频率: | 10 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-WFDFN Exposed Pad |
供应商设备包: | 8-TDFN (2x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT25080B-WWU11LRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 20MHZ WAFER |
|
S29CL032J0RQFM030Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 80PQFP |
|
MT29F512G08EMCBBJ5-10ES:B TRMicron Technology |
IC FLASH 512GBIT PARALLEL 100MHZ |
|
R1WV6416RBG-5SI#S0Renesas Electronics America |
IC SRAM 64MBIT PARALLEL 48TFBGA |
|
MT29F256G08APEDBJ6-12:DMicron Technology |
IC FLASH 256GBIT PAR 132LBGA |
|
CY62167ESL-55FNXITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 60WLCSP |
|
EDW2032BBBG-7A-F-R TRMicron Technology |
IC RAM 2GBIT PARALLEL 170FBGA |
|
MT29C4G96MAZBBCJV-48 ITMicron Technology |
IC FLASH RAM 4GBIT PAR 168VFBGA |
|
MT53B768M32D4NQ-062 WT:BMicron Technology |
IC DRAM 24GBIT 1600MHZ 200VFBGA |
|
SST25WF040B-40I/W13GRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 40MHZ WAFER |
|
MTFC32GAPALNA-AATMicron Technology |
IC FLASH 256GBIT MMC 100TBGA |
|
16-100035-01-TCypress Semiconductor |
IC GATE NOR |
|
28450379 ACypress Semiconductor |
IC FLASH NOR |