类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH, RAM |
技术: | FLASH - NAND, Mobile LPDRAM |
内存大小: | 2Gb (128M x 16)(NAND), 1Gb (32M x 32)(LPDRAM) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 137-TFBGA |
供应商设备包: | 137-TFBGA (10.5x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7050S25PQFRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 132PQFP |
|
CG7795AATCypress Semiconductor |
IC SRAM MICROPOWER |
|
MT29F128G08AUABAC5-IT:BMicron Technology |
IC FLASH 128GBIT PARALLEL 52VLGA |
|
DS1245YL-70Maxim Integrated |
IC NVSRAM 1MBIT PARALLEL 34LPM |
|
S70PL254J00BFWA23Cypress Semiconductor |
IC FLASH MEM NOR 84MCP |
|
MT35XL256ABA1G12-0AAT TRMicron Technology |
IC FLASH 256MBIT XCCELA 24TPBGA |
|
MT29F1HT08ELCBBG1-37ES:B TRMicron Technology |
IC FLASH 1.5T PARALLEL 272VBGA |
|
MT53D8D1ASQ-DCMicron Technology |
LPDDR4 0 768MX64 FBGA 8DP |
|
7006S55JRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
|
47L16-I/WF16KRoving Networks / Microchip Technology |
IC EERAM 16KBIT I2C 1MHZ DIE |
|
M36W0R5040B5ZAQEMicron Technology |
IC FLASH 32MBIT PARALLEL 88TFBGA |
|
AT49BV802AT-70CI-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48CBGA |
|
CG8253AATCypress Semiconductor |
IC SRAM ASYNC |