类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR |
内存大小: | 4Gb (128M x 32) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 5 ns |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -25°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 240-WFBGA |
供应商设备包: | 240-WFBGA (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W25Q64FVSH03Winbond Electronics Corporation |
IC FLASH 64MBIT SPI 104MHZ |
|
M27C4002-80XF1STMicroelectronics |
IC EPROM 4MBIT PARALLEL 40CDIP |
|
MT29F512G08EMCBBJ5-6:BMicron Technology |
IC FLASH 512GBIT PARALLEL 167MHZ |
|
70V9199L12PFIRenesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |
|
MT41J256M16HA-093G:E TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
70V9099L7PFI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
MT53D768M64D8JS-053 WT:DMicron Technology |
IC DRAM 48GBIT 1866MHZ 366VFBGA |
|
MT46H128M32L2MC-5 WT:B TRMicron Technology |
IC DRAM 4GBIT PARALLEL 240WFBGA |
|
MT29F64G08AMABAC5:BMicron Technology |
IC FLASH 64GBIT PARALLEL 52VLGA |
|
709079S12PFIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
S70WS512N00BAWAA2Cypress Semiconductor |
IC MEMORY NOR |
|
M50FW016N5GMicron Technology |
IC FLASH 16MBIT PARALLEL 40TSOP |
|
7015L15J8Renesas Electronics America |
IC SRAM 72KBIT PARALLEL 68PLCC |