类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR4 |
内存大小: | 8Gb (256M x 32) |
内存接口: | - |
时钟频率: | 1.6 GHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.1V |
工作温度: | -30°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 200-WFBGA |
供应商设备包: | 200-WFBGA (10x14.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MTFC32GAMALAM-WT ES TRMicron Technology |
IC FLASH 256GBIT MMC |
|
MT53D1024M32D4NQ-046 AAT:DMicron Technology |
IC DRAM 32GBIT 2133MHZ 200VFBGA |
|
MT25QL02GCBA8E12-0SITMicron Technology |
IC FLSH 2GBIT SPI 133MHZ 24TPBGA |
|
S30ML512P50TFI033Cypress Semiconductor |
IC FLASH MEMORY 48TSOP |
|
MT53D384M64D4TZ-053 WT ES:C TRMicron Technology |
IC DRAM 24GBIT 1866MHZ FBGA |
|
MT29F128G08AECBBH6-6:B TRMicron Technology |
IC FLSH 128GBIT PARALLEL 152VBGA |
|
CG8247AATCypress Semiconductor |
IC SRAM |
|
7027L25PFI8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
SGIPC-000618Cypress Semiconductor |
IC FLASH NAND 48TSOPI |
|
MTFC64GAOAMEA-WT ESMicron Technology |
MASSFLASH/CONTROLLER 512G |
|
S99AL016J0250Cypress Semiconductor |
IC FLASH |
|
MT38W201DAA033JZZI.X68 TRMicron Technology |
MCP 5MX16 PLASTIC 2.0V IND TEMP |
|
N2M400GDB321A3CF TRMicron Technology |
IC FLSH 64GBIT MMC 52MHZ 100LBGA |