类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH, RAM |
技术: | FLASH - NAND, Mobile LPDRAM |
内存大小: | 1Gb (64M x 16)(NAND), 512Mb (32M x 16)(LPDRAM) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 153-VFBGA |
供应商设备包: | 153-VFBGA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CMSNRECypress Semiconductor |
MICROPOWER SRAM |
|
M29W640GB70ZS6EMicron Technology |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
PC28F064M29EWHAMicron Technology |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
MT41K1G8TRF-125 IT:E TRMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
AT45DB021B-CIRoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 20MHZ 9CBGA |
|
MT42L16M32D1U67MWC2Micron Technology |
IC LPDDR2 SDRAM 1GBIT |
|
MT42L128M64D2MC-18 IT:A TRMicron Technology |
IC DRAM 8GBIT PARALLEL 240FBGA |
|
71321SA25JIRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
IS61NLP25672-200B1I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 209LFBGA |
|
7GA6Y0060Cypress Semiconductor |
IC GATE NOR |
|
S99-50295Cypress Semiconductor |
IC GATE NOR |
|
M58WR032KB70ZQ6W TRMicron Technology |
IC FLASH 32MBIT PARALLEL 88VFBGA |
|
S29WS128N0SBFW010Cypress Semiconductor |
IC MEMORY NOR |