类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 2Mb (256K x 8, 128K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 55 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-SOIC (0.496", 12.60mm Width) |
供应商设备包: | 44-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT51K256M32HF-50 N:A TRMicron Technology |
IC RAM 8GBIT PARALLEL 1.25GHZ |
|
MTFC16GLUAM-WTMicron Technology |
IC FLASH 128GBIT MMC 153VFBGA |
|
S99FL132KI010Cypress Semiconductor |
IC FLASH NOR |
|
MT29F1T208EGHBBG1-3R:B TRMicron Technology |
IC FLASH 1.125T PARALLEL 272VBGA |
|
MT53B384M64D4NK-053 WT ES:BMicron Technology |
IC DRAM 24GBIT 1866MHZ 366WFBGA |
|
W972GG8JB25I TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 60WBGA |
|
MT29F2G16ABAEAWP:E TRMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
M29F040B90K1Micron Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
MT29F2T08CTCCBJ7-6C:CMicron Technology |
IC FLASH 2TB PARALLEL 152LBGA |
|
M29F200FB55M3E2Micron Technology |
IC FLASH 2MBIT PARALLEL 44SO |
|
MT41K256M16HA-125:EMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
MT48H32M16LFBF-6:BMicron Technology |
IC DRAM 512MBIT PARALLEL 54VFBGA |
|
M29F080D70N6EMicron Technology |
IC FLASH 8MBIT PARALLEL 40TSOP |