English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR3 |
| 内存大小: | 4Gb (512M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 667 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 13.5 ns |
| 电压 - 电源: | 1.425V ~ 1.575V |
| 工作温度: | 0°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 82-FBGA |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT41K128M16JT-125 V:KMicron Technology |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
|
MTFC32GAMAKAM-WT TRMicron Technology |
IC FLASH 256GBIT MMC 153VFBGA |
|
|
93LC46B-I/S15KRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ DIE |
|
|
CG8213AATCypress Semiconductor |
IC SRAM |
|
|
MT53D2G32D8QD-062 WT ES:D TRMicron Technology |
LPDDR4 64G 2GX32 FBGA 8DP |
|
|
MT53D256M64D4KA-046 XT:ES BMicron Technology |
IC DRAM 16GBIT 2133MHZ FBGA |
|
|
A5140970Y0500AACypress Semiconductor |
IC MEM NOR SMD |
|
|
S30MS01GP25TFW003Cypress Semiconductor |
IC FLASH MEMORY 48TSOP |
|
|
SST39WF400B-70-4I-VARoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL WAFER |
|
|
S29CD032J0PFAM010Cypress Semiconductor |
IC MEMORY NOR SMD |
|
|
MT53B4DBNH-DCMicron Technology |
IC DRAM 24GBIT 272WFBGA |
|
|
MT29F256G08CKCDBJ5-6R:DMicron Technology |
IC FLASH 256GBIT PAR 132TBGA |
|
|
CG8406AATCypress Semiconductor |
IC SRAM |
