| 类型 | 描述 |
|---|---|
| 系列: | e•MMC™ |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND |
| 内存大小: | 32Gb (4G x 8) |
| 内存接口: | MMC |
| 时钟频率: | - |
| 写周期时间 - 字,页: | - |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -25°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
MT61M256M32JE-12 N:A TRMicron Technology |
IC RAM 8GBIT PARALLEL 180FBGA |
|
|
MT29F4G16ABAEAH4-IT:EMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
|
MT42L256M64D4LD-18 WT:A TRMicron Technology |
IC DRAM 16GBIT PARALLEL 220FBGA |
|
|
MT53D512M64D8HR-053 WT:B TRMicron Technology |
IC DRAM LPDDR4 32G SMD |
|
|
MT53D512M32D2NP-046 WT ES:E TRMicron Technology |
IC DRAM 16GBIT 2133MHZ 200WFBGA |
|
|
ECF620AAACN-C1-Y3-ESMicron Technology |
LPDDR3 6G DIE 192MX32 |
|
|
S99GL032N0070Cypress Semiconductor |
IC FLASH |
|
|
25AA010A/WF16KRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 10MHZ DIE |
|
|
MT29F512G08CUEDBJ6-12:D TRMicron Technology |
IC FLASH 512GBIT PAR 132LBGA |
|
|
MT29F32G08AECCBH1-10:C TRMicron Technology |
IC FLASH 32GBIT PARALLEL 100VBGA |
|
|
S99PL032J0050Cypress Semiconductor |
IC FLASH |
|
|
MT41K1G4RG-107:N TRMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
|
AK6508CTAsahi Kasei Microdevices / AKM Semiconductor |
IC EEPROM 16KBIT SPI 8TMSOP |