类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 512Kb (32K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 25ns |
访问时间: | 25 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT53B512M32D2NP-062 AAT:CMicron Technology |
IC DRAM 16GBIT 1600MHZ 200WFBGA |
|
MT28GU512AAA1EGC-0SIT TRMicron Technology |
IC FLASH 512MBIT PARALLEL 64TBGA |
|
MT53B384M64D4NH-062 WT:B TRMicron Technology |
IC DRAM 24GBIT 1600MHZ 272WFBGA |
|
A2C00063405 ACypress Semiconductor |
IC GATE NOR |
|
7143LA90J/S2418Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
A2C00064358 ACypress Semiconductor |
IC GATE NOR |
|
7005S20J8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
MT42L128M64D4LD-25 IT:AMicron Technology |
IC DRAM 8GBIT PARALLEL 220FBGA |
|
7130LA35JI8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
MT48LC16M8A2BB-6A AAT:L TRMicron Technology |
IC DRAM 128MBIT PARALLEL 60FBGA |
|
MT53D384M16D1NY-046 XT ES:DMicron Technology |
LPDDR4 6G 384MX16 FBGA |
|
MT29F1T08CLHBBG1-3R:B TRMicron Technology |
IC 128GX8 272VBGA |
|
S99PL127J0090Cypress Semiconductor |
IC FLASH MEM NOR 56TSOPI |