类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29F256G08AUAAAC5-Z:A TRMicron Technology |
IC FLASH 256GBIT PARALLEL 52VLGA |
|
S40135MM270B0S010Cypress Semiconductor |
IC MEMORY NOR |
|
7133SA90J8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
PC28F128G18AEMicron Technology |
IC FLASH 128MBIT PAR 64EASYBGA |
|
S30ML512P30TFI003Cypress Semiconductor |
IC FLASH MEMORY 48TSOP |
|
MT40A512M8RH-075E AIT:B TRMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
EDF4432ACPE-GD-F-R TRMicron Technology |
IC DRAM 4GBIT PARALLEL 800MHZ |
|
93LC76C/W15KRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ DIE |
|
S99PL127J0120Cypress Semiconductor |
IC FLASH |
|
EDFM432A1PF-GD-F-DMicron Technology |
IC DRAM 12GBIT PARALLEL 216FBGA |
|
99326-E0953Cypress Semiconductor |
IC GATE NOR |
|
709279S12PFI8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
7006L45J8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |