English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 32Kb (2K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 90ns |
| 访问时间: | 90 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 68-LCC (J-Lead) |
| 供应商设备包: | 68-PLCC (24.21x24.21) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
25CS640-I/STRoving Networks / Microchip Technology |
IC MEMORY EEPROM 64MB SPI |
|
|
W29GL128CL9C TRWinbond Electronics Corporation |
IC FLSH 128MBIT PARALLEL 56TFBGA |
|
|
MT29E1T08CUCCBH8-6:C TRMicron Technology |
IC FLASH 1TB PARALLEL 152LBGA |
|
|
EDFA332A3PB-JD-F-DMicron Technology |
IC DRAM 16GBIT PARALLEL 933MHZ |
|
|
24CS512-I/MSRoving Networks / Microchip Technology |
512K 3.4MHZ I2C SERIAL EEPROM |
|
|
MT53D8D1AJS-DC TRMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
|
MT48LC16M16A2B4-7E:GMicron Technology |
IC DRAM 256MBIT PARALLEL 54VFBGA |
|
|
CH393-80022Cypress Semiconductor |
IC FLASH NOR |
|
|
MTFC128GAPALNA-AIT ES TRMicron Technology |
EMMC 1024G MMC5.1 J59X AT |
|
|
S99GL064N90TFI060Cypress Semiconductor |
IC GATE NOR |
|
|
MT52L256M64D2PP-093 WT:BMicron Technology |
IC DRAM 16GBIT 1067MHZ 253VFBGA |
|
|
11AA160-I/S16KRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SINGLE WIRE DIE |
|
|
MT53B768M64D8WF-062 WT:DMicron Technology |
IC DRAM 48GBIT 1600MHZ FBGA |
