类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT53B1G64D8NW-062 WT ES:DMicron Technology |
LPDDR4 64G 1GX64 FBGA 8DP |
|
25AA160D-I/S16KRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ DIE |
|
MT29F32G08AFABAWP:B TRMicron Technology |
IC FLASH 32GBIT PARALLEL 48TSOP |
|
11AA160-I/W16KRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SINGLE WIRE DIE |
|
MT53B256M32D1Z91MWC1Micron Technology |
LPDDR4 8G DIE 256MX32 |
|
AT24CM02-U1UM0B-TRoving Networks / Microchip Technology |
IC EEPROM 2MBIT I2C 1MHZ 8WLCSP |
|
MT49H16M18CTR-25:BMicron Technology |
IC DRAM 288MBIT PARALLEL 400MHZ |
|
MT46H256M32R4JV-5 IT:BMicron Technology |
IC DRAM 8GBIT PARALLEL 168VFBGA |
|
MT29E512G08CMCCBH7-6:C TRMicron Technology |
IC FLASH 512GBIT PAR 152TBGA |
|
363531-0010 00Cypress Semiconductor |
IC FLASH |
|
CG8413AACypress Semiconductor |
IC SRAM ASYNC 85SOJ |
|
RM24C256C-LCSI-TAdesto Technologies |
IC EEPROM 256KBIT I2C 6WLCSP |
|
11AA010-I/S16KRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SINGLE WIRE DIE |