类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 128Kb (8K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 35ns |
访问时间: | 35 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7142SA25JI8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
JR28F032M29EWBAMicron Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
N25Q016A11EV7A0Micron Technology |
IC FLASH 16MBIT SPI 108MHZ DIE |
|
709079L9PFI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
28276189 ACypress Semiconductor |
IC GATE NOR |
|
MT29F1G16ABBDAH4-IT:D TRMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
70914S15JRenesas Electronics America |
IC SRAM 36KBIT PARALLEL 68PLCC |
|
7132SA35JIRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
MT29F256G08AUCDBJ6-6IT:DMicron Technology |
IC FLASH 256GBIT PAR 132LBGA |
|
71V321LA35PF8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
MTFC128GAJAECE-5M AIT TRMicron Technology |
IC FLASH 1TB MMC 169LFBGA |
|
S98WS768P0GFW0100BCypress Semiconductor |
IC MEMORY NOR |
|
70V9199L7PFI8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |