English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | - |
| 内存格式: | - |
| 技术: | - |
| 内存大小: | - |
| 内存接口: | - |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S29PL127J60BAI000ECypress Semiconductor |
IC FLASH NOR 80FBGA |
|
|
MT29RZ4B4DZZNGPL-18WE.4U2Micron Technology |
IC FLASH 8G DDR2 |
|
|
MT46H256M32L4JV-6 IT:AMicron Technology |
IC DRAM 8GBIT PARALLEL 168VFBGA |
|
|
MT53B2DBNP-DC TRMicron Technology |
IC DRAM 12GBIT 200WFBGA |
|
|
70V05S15JRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
|
524313-026-00Cypress Semiconductor |
IC FLASH |
|
|
S99FL256S0000Cypress Semiconductor |
IC FLASH |
|
|
MT40A512M8Z90BWC1Micron Technology |
DDR4 4G DIE 512MX8 |
|
|
S99FL164KMM11Cypress Semiconductor |
IC FLASH NOR |
|
|
M29F002BT70K6EMicron Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
|
DS28E04S-224-BB+TMaxim Integrated |
ADDRESSABLE 1-WIRE EEPROM SO16 B |
|
|
MT40A512M8RH-075E IT:B TRMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
|
IS62WV5128EALL-55BI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 36TFBGA |
