类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 128Kb (16K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 17ns |
访问时间: | 17 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 68-LCC (J-Lead) |
供应商设备包: | 68-PLCC (24.21x24.21) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
93AA86C/WF15KRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ DIE |
![]() |
CG8249AATCypress Semiconductor |
IC SRAM PARALLEL 28TSOP I |
![]() |
SST26WF064C-104I/SORoving Networks / Microchip Technology |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
![]() |
70261S35PFIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
![]() |
S70PL512N00HFW533Cypress Semiconductor |
IC MEMORY NOR |
![]() |
S99-50238Cypress Semiconductor |
IC MEMORY NOR SMD |
![]() |
MT29TZZZ7D6JKKFB-107 W.96V TRMicron Technology |
MLC EMMC/LPDDR3 152G |
![]() |
MT49H32M18CBM-18:BMicron Technology |
IC DRAM 576MBIT PARALLEL 144UBGA |
![]() |
CG8233AACypress Semiconductor |
IC SRAM MICROPOWER |
![]() |
7025L17PFI8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
![]() |
MTFC4GACAJCN-1M WTMicron Technology |
IC FLASH 32GBIT MMC 153VFBGA |
![]() |
MT47H256M8THN-3 IT:HMicron Technology |
IC DRAM 2GBIT PARALLEL 63FBGA |
![]() |
R1EV24004ASAS0I#K0Renesas Electronics America |
IC EEPROM 4KB I2C 8SOP |