类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | DRAM - EDO |
内存大小: | 16Mb (1M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 84ns |
访问时间: | 25 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 42-BSOJ (0.400", 10.16mm Width) |
供应商设备包: | 42-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT47H128M8HQ-3 IT:G TRMicron Technology |
IC DRAM 1GBIT PARALLEL 60FBGA |
|
S99-50359Cypress Semiconductor |
IC FLASH |
|
CG8236AATCypress Semiconductor |
IC SRAM |
|
EDW2032BBBG-50-F-R TRMicron Technology |
IC RAM 2GBIT PARALLEL 170FBGA |
|
MTFC16GJVEC-4M ITMicron Technology |
IC FLASH 128GBIT MMC 169VFBGA |
|
7024S20PFI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
EDFA164A2PH-GD-F-DMicron Technology |
IC DRAM 16GBIT PARALLEL 800MHZ |
|
S99-50553SkyHigh Memory Limited |
IC MEMORY FLASH NAND 63-TSOP |
|
A2C00055932ACypress Semiconductor |
IC MEM NOR SMD |
|
7016L35J8Renesas Electronics America |
IC SRAM 144K PARALLEL 68PLCC |
|
CG8426AATCypress Semiconductor |
IC SRAM SMD |
|
70P254L55BYGIRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 81CABGA |
|
CH376-80032Cypress Semiconductor |
IC FLASH NOR |