类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 8ns |
访问时间: | 8 ns |
电压 - 电源: | 2.4V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-SOIC (0.400", 10.16mm Width) |
供应商设备包: | 32-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT41K64M16JT-125:G TRMicron Technology |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
MT49H16M36BM-18:BMicron Technology |
IC DRAM 576MBIT PARALLEL 144UBGA |
|
MT41K512M8RH-107:EMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
S99PL127J0240 PCypress Semiconductor |
IC FLASH MEM NOR 80FBGA |
|
M58WR032KU70ZA6U TRMicron Technology |
IC FLASH 32MBIT PARALLEL 44VFBGA |
|
DS28E01P-W0N+1Maxim Integrated |
IC EEPROM |
|
M29F400FT55N3E2Micron Technology |
IC FLASH 4MBIT PARALLEL 44SO |
|
MT53B512M64D4NK-062 WT ES:CMicron Technology |
IC DRAM 32GBIT 1600MHZ 366WFBGA |
|
M27C256B-90C6STMicroelectronics |
IC EPROM 256KBIT PARALLEL 32PLCC |
|
MT53D512M64D4RQ-053 WT ES:E TRMicron Technology |
IC DRAM 32GBIT 1866MHZ 556WFBGA |
|
UPD48576118F1-E24-DW1-ARenesas Electronics America |
IC DRAM 576MBIT HSTL 144TFBGA |
|
71342SA70JI8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 52PLCC |
|
MT41J256M8HX-15E IT:DMicron Technology |
IC DRAM 2GBIT PARALLEL 78FBGA |