English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Last Time Buy |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 2Kb (2K x 1) |
| 内存接口: | 1-Wire® |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 5µs |
| 访问时间: | 2 µs |
| 电压 - 电源: | 2.97V ~ 3.63V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | 6-TSOC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT42L128M32D1LH-25 WT:A TRMicron Technology |
IC DRAM 4GBIT PARALLEL 216FBGA |
|
|
S98WS512P00FW0032Cypress Semiconductor |
IC GATE NOR |
|
|
CG8276AACypress Semiconductor |
IC MEMORY F-RAM SER 8SOIC |
|
|
CG8188AACypress Semiconductor |
IC SRAM ASYNC 28TSOP I |
|
|
MT29C1G12MAADAEAKC-6 ITMicron Technology |
IC FLASH RAM 1GBIT PAR 107VFBGA |
|
|
AT24C512-10UI-2.7Roving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 1MHZ 8DBGA |
|
|
MT29TZZZ7D7EKKBT-107 W.97V TRMicron Technology |
256MX8/128MX16 MCP PLASTIC 1.8V |
|
|
S29GL512N10TFI010Cypress Semiconductor |
IC FLASH MEMORY NOR PARALLEL |
|
|
24AA08T-I/CS16KRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 4CSP |
|
|
MT29C8G96MAZAPDJA-5 ITMicron Technology |
IC FLASH RAM 8GBIT PAR 200MHZ |
|
|
S99-50260Cypress Semiconductor |
IC FLASH |
|
|
S71PL127JB0BFWQB0GCypress Semiconductor |
IC FLASH MEMORY SMD |
|
|
MT29F256G08AKCBBK7-6:B TRMicron Technology |
IC FLASH 256GBIT PARALLEL 167MHZ |
