English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR3L |
| 内存大小: | 2Gb (128M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 800 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 13.75 ns |
| 电压 - 电源: | 1.283V ~ 1.45V |
| 工作温度: | 0°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 96-TFBGA |
| 供应商设备包: | 96-FBGA (8x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NM27C020Q120Sanyo Semiconductor/ON Semiconductor |
IC EPROM 2MBIT PARALLEL 32CDIP |
|
|
7006S15PFIRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 64TQFP |
|
|
7130SA25JIRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
|
S29AS008J70WEI029Cypress Semiconductor |
IC FLASH 8MBIT PARALLEL WAFER |
|
|
M58BW016FB7D150T TRMicron Technology |
IC FLASH 16MBIT PARALLEL DIE |
|
|
MT29F4G16ABBFAH4-AATES:FMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
|
16-3459-02Cypress Semiconductor |
IC GATE NOR |
|
|
MT53E1G64D4SQ-046 AAT:A TRMicron Technology |
IC DRAM LPDDR4 WFBGA |
|
|
MT53B256M64D2NV MS TRMicron Technology |
IC DRAM 16GBIT FBGA |
|
|
IS62WV5128EBLL-45BI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 36TFBGA |
|
|
AT45DB641E-UUN-TAdesto Technologies |
IC FLSH 64MBIT SPI 85MHZ 44WLCSP |
|
|
24AA08SC-I/W16KRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ DIE |
|
|
EDFA164A2PF-GD-F-DMicron Technology |
IC DRAM 16GBIT PARALLEL 800MHZ |
