类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3L |
内存大小: | 4Gb (256M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.283V ~ 1.45V |
工作温度: | 0°C ~ 95°C (TC) |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25LC512-I/W16KRoving Networks / Microchip Technology |
IC EEPROM 512KBIT SPI 20MHZ DIE |
|
CG7733AACypress Semiconductor |
IC EMI REDUCTION PREMIS SSCG |
|
MT29C2G24MAAAAHAKC-5 ITMicron Technology |
IC FLASH/LPDRAM 3GBIT |
|
MT29AZ5A5CHGSQ-18AIT.87UMicron Technology |
IC FLASH 8GB NAND |
|
MT53D384M16D1Z1AMWC1Micron Technology |
LPDDR4 6G DIE 384MX16 |
|
CG8682AFCypress Semiconductor |
IC MCD CCG2 TYPE C 24QFN |
|
M29F800DT70M6Micron Technology |
IC FLASH 8MBIT PARALLEL 44SO |
|
MT53B1024M64D8WF-062 WT ES:DMicron Technology |
IC DRAM 64GBIT 1600MHZ |
|
IS61WV12824-8BIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 3MBIT PARALLEL 119PBGA |
|
N25Q512A83G12A0FMicron Technology |
IC FLASH 512MBIT SPI 24TPBGA |
|
MT29F512G08CKCBBH7-6R:B TRMicron Technology |
IC FLASH 512GBIT PAR 152TBGA |
|
P770040CFWC071 XFCypress Semiconductor |
IC MEMORY NOR |
|
MT29F512G08EBHAFB17A3WC1-FESMicron Technology |
IC FLASH 512GBIT DIE |