类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 16Kb (2K x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | Die |
供应商设备包: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT46H16M32LFCM-6 L IT:BMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
MT53B256M32D1GZ-062 AIT:BMicron Technology |
IC DRAM 8GBIT 1600MHZ 200WFBGA |
|
AT49BV1614A-70CIRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48CBGA |
|
MT40A8G4KVA-075H:G TRMicron Technology |
MEMORY DRAM |
|
J005-S2532-001Cypress Semiconductor |
IC MPD NOR 8SOIC |
|
16-4072-01-TCypress Semiconductor |
IC GATE NOR |
|
DSQ3301-K04+TWMaxim Integrated |
IC EEPROM 512BIT 1WIRE |
|
MTFC16GJDEC-H1 WTMicron Technology |
IC FLASH 128GBIT MMC |
|
S29WS128N0LBAW013Cypress Semiconductor |
IC MEMORY NOR |
|
S29GL256P11WEI019Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL WAFER |
|
CAT25020YI-GDSanyo Semiconductor/ON Semiconductor |
IC EEPROM 2KBIT SPI 8SOIC |
|
MT52L1G32D4PG-093 WT ES:BMicron Technology |
IC DRAM 32GBIT 1067MHZ 178FBGA |
|
MTFC64GANALAM-WT ES TRMicron Technology |
IC FLASH 512GBIT MMC |