English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 64Kb (4K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 15 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 84-LCC (J-Lead) |
| 供应商设备包: | 84-PLCC (29.21x29.21) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
7143LA25JI8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
|
584327-001-00Cypress Semiconductor |
IC FLASH NOR |
|
|
MTFC8GLUDM-AIT TRMicron Technology |
IC FLASH 64GBIT MMC 153TFBGA |
|
|
MT35XU512ABA2G12-0AAT TRMicron Technology |
IC FLASH 512MBIT XCCELA 24TPBGA |
|
|
PF48F4400P0VBQEJMicron Technology |
IC FLASH 512MBIT PARALLEL 88SCSP |
|
|
MT40A1G16HBA-083E:AMicron Technology |
IC DRAM 16GBIT PARALLEL 96FBGA |
|
|
IS43LD32320C-25BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 400MHZ |
|
|
DS1250BL-100Maxim Integrated |
IC NVSRAM 4MBIT PARALLEL 34LPM |
|
|
DS28E02P-W10+9TMaxim Integrated |
IC EEPROM 1KBIT 1-WIRE 6TSOC |
|
|
MT29E4T08CTHBBM5-3ES:B TRMicron Technology |
IC FLASH 4TB PARALLEL 333MHZ |
|
|
MT53D512M32D2NP-046 AUT ES:D TRMicron Technology |
IC DRAM 16GBIT 2133MHZ 200WFBGA |
|
|
70V07S35PFI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 80TQFP |
|
|
IS42S32400F-6B-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
