类型 | 描述 |
---|---|
系列: | * |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT53B1024M32D4NQ-053 WT:C TRMicron Technology |
IC DRAM 32GBIT 1866MHZ 200VFBGA |
|
S99GL128P0120Cypress Semiconductor |
IC FLASH |
|
MT29F2G08ABBFAH4:F TRMicron Technology |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
N25Q256A11E1241F TRMicron Technology |
IC FLASH 256MBIT SPI 24TPBGA |
|
MT46H32M32LFB5-48 IT:B TRMicron Technology |
IC DRAM 1GBIT PARALLEL 90VFBGA |
|
MT29F2G08ABAEAH4-ITE:E TRMicron Technology |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
MT53D1024M32D4NQ-053 WT:DMicron Technology |
IC DRAM 32GBIT 1866MHZ 200VFBGA |
|
M29W128GH70ZA3EMicron Technology |
IC FLASH 128MBIT PARALLEL 64TBGA |
|
7006L25J8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
|
MT29PZZZ8D4BKFSK-18 W.94L TRMicron Technology |
MOD EMMC NAND 4GB 162VFBGA |
|
MT53D512M64D4SB-046 XT:DMicron Technology |
IC DRAM 32GBIT 2133MHZ |
|
EDBM432B3PF-1D-F-R TRMicron Technology |
IC DRAM 12GBIT PARALLEL 168FBGA |
|
MT29F64G08AKCBBH2-12:BMicron Technology |
IC FLASH 64GBIT PARALLEL 100TBGA |