类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 4Mb (512K x 8) |
内存接口: | Parallel |
时钟频率: | 33 MHz |
写周期时间 - 字,页: | - |
访问时间: | 250 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -20°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-TFSOP (0.488", 12.40mm Width) |
供应商设备包: | 32-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29F256G08AMCBBH7-6IT:B TRMicron Technology |
IC FLASH 256GBIT PAR 152TBGA |
|
AT49SV802A-90CURoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48CBGA |
|
IDT71T016SA20BF8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 48CABGA |
|
MT29C2G24MAAAAKAKD-5 ITMicron Technology |
IC FLASH RAM 2GBIT PAR 137TFBGA |
|
W29N01HVSIAAWinbond Electronics Corporation |
IC 1GBIT NAND 3V X 8BIT 48TSSOP |
|
MT46H64M32L2CG-6 IT:AMicron Technology |
IC DRAM 2GBIT PARALLEL 152VFBGA |
|
71321SA55TFIRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
MT29F1T08CUCBBH8-6C:BMicron Technology |
IC FLASH 1TB PARALLEL 152LBGA |
|
S29GL064SSEI039Cypress Semiconductor |
IC FLASH 64MB FLASH NOR DIE |
|
MT29E1T08CPCBBH8-6:B TRMicron Technology |
IC FLASH 1TB PARALLEL 152LBGA |
|
MT29E512G08CMCCBH7-6ES:C TRMicron Technology |
IC FLASH 512GBIT PAR 152TBGA |
|
MT29F128G08AMEDBJ5-12:DMicron Technology |
IC FLASH 128GBIT PARALLEL 83MHZ |
|
EDF8132A3PB-JD-F-R TRMicron Technology |
IC DRAM 8GBIT PARALLEL 216FBGA |