CAP CER 1206 5.6PF 25V ULTRA STA
IC DRAM 4GBIT PARALLEL 134FBGA
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR2 |
内存大小: | 4Gb (128M x 32) |
内存接口: | Parallel |
时钟频率: | 400 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.14V ~ 1.3V |
工作温度: | -25°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 138-UFBGA, WLBGA |
供应商设备包: | 134-FBGA (10x11.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CG8272AATCypress Semiconductor |
IC SRAM |
|
NMC87C257VE200Sanyo Semiconductor/ON Semiconductor |
IC EPROM 256MBIT PARALLEL 32PLCC |
|
MT53B256M32D1GZ-062 WT ES:BMicron Technology |
IC LPDDR4 8G 256MX32 200WFBGA |
|
AK93C65AFAsahi Kasei Microdevices / AKM Semiconductor |
IC EEPROM 4KBIT SPI 8SOP |
|
M29F200FB55N3E2Micron Technology |
IC FLASH 2MBIT PARALLEL 48TSOP |
|
520966231496Cypress Semiconductor |
IC FLASH NOR |
|
MT44K64M18RB-083E:AMicron Technology |
IC RLDRAM 1.125GBIT PAR 168BGA |
|
CAT25010LI-GDSanyo Semiconductor/ON Semiconductor |
IC EEPROM 1KBIT SPI 8DIP |
|
70V9099L12PFIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
24CS512-E/STRoving Networks / Microchip Technology |
512K 3.4MHZ I2C SERIAL EEPROM |
|
MT53D1024M32D4NQ-062 WT ES:D TRMicron Technology |
IC DRAM 32GBIT 1600MHZ 200VFBGA |
|
M29W160ET7AN6F TRMicron Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
7026S25JIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PLCC |