类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR3 |
内存大小: | 16Gb (128M x 128) |
内存接口: | Parallel |
时钟频率: | 933 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.14V ~ 1.95V |
工作温度: | -30°C ~ 85°C (TC) |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CG8220AACypress Semiconductor |
IC SRAM ASYNC |
|
S99AL008J70BFI010Cypress Semiconductor |
IC FLASH MEMORY NOR |
|
7133LA70JI8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
MT29F512G08CUCDBJ6-6R:D TRMicron Technology |
IC FLASH 512GBIT PAR 132LBGA |
|
EDFA232A2MA-JD-F-R TRMicron Technology |
IC DRAM 16GBIT PARALLEL 933MHZ |
|
7006L55J8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
|
MT49H16M18FM-33 TRMicron Technology |
IC DRAM 288MBIT PARALLEL 144UBGA |
|
MT4A2G8NRE-83E:BMicron Technology |
IC SDRAM 16GB DDR4 FBGA |
|
MT28HL64GRBA6EBL-0GCTMicron Technology |
NOR FLASH 1GX64 PLASTIC PBF TLGA |
|
CG8229AACypress Semiconductor |
IC SRAM MICROPOWER |
|
MT42L256M64D4EV-18 WT:A TRMicron Technology |
IC DRAM 16GBIT PARALLEL 253FBGA |
|
V98WS01GP0HFW0020CCypress Semiconductor |
IC GATE NOR |
|
S30ML512P50TFI510Cypress Semiconductor |
IC FLASH MEMORY 48TSOP |