类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR |
内存大小: | 128Mb (4M x 32) |
内存接口: | Parallel |
时钟频率: | 250 MHz |
写周期时间 - 字,页: | 16ns |
访问时间: | 700 ps |
电压 - 电源: | 2.4V ~ 2.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 144-LFBGA |
供应商设备包: | 144-LFBGA (12x12) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W97BH2KBQX2IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 168WFBGA |
|
7130SA45JIRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
MT53D8DBNW-DCMicron Technology |
LPDDR4 16G FBGA 8DP |
|
MT29F512G08CMEABH7-12:A TRMicron Technology |
IC FLASH 512GBIT PAR 152TBGA |
|
SFEM4096B1EM1TO-I-GE-111-STDSwissbit |
IC FLSH 32GBIT EMMC 52MHZ 153BGA |
|
M29W256GL7AN6F TRMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
MT53B512M32D2GZ-062 WT ES:B TRMicron Technology |
IC DRAM 16GBIT 1600MHZ 200WFBGA |
|
MT53D256M64D4NY-046 XT ES:BMicron Technology |
IC DRAM 16GBIT 2133MHZ FBGA |
|
S99-50282Cypress Semiconductor |
IC GATE NOR |
|
7133LA55JIRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
SM662PEE-BDSilicon Motion |
FERRI-EMMC BGA 153-B EMMC 3D TLC |
|
7015L12JRenesas Electronics America |
IC SRAM 72KBIT PARALLEL 68PLCC |
|
AT24C512-10UI-1.8Roving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8DBGA |