类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH, RAM |
技术: | FLASH - NAND, Mobile LPDRAM |
内存大小: | 4Gb (256M x 16)(NAND), 4Gb (128M x 32)(LPDRAM) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -25°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 168-VFBGA |
供应商设备包: | 168-VFBGA (12x12) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
N25Q128A13EV740Micron Technology |
IC FLASH 128MBIT SPI 108MHZ |
|
CAT25640ZI-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT SPI 8MSOP |
|
N25Q256A73ESF40G TRMicron Technology |
IC FLASH 256MBIT SPI 16SOP2 |
|
MT42L128M32D2KL-3 IT:AMicron Technology |
IC DRAM 4GBIT PARALLEL 168FBGA |
|
MT29F2T08CUCBBK9-37ES:BMicron Technology |
IC FLASH 2TB PARALLEL 267MHZ |
|
W972GG8JB-18Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 60WBGA |
|
MT29E256G08CMCDBJ5-6:DMicron Technology |
IC FLASH 256GBIT PAR 132TBGA |
|
70V9089S9PFI8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
7130SA55TFIRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
CAT25160HU2IGT3CSanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KB SER SPI 8UDFN |
|
7143LA90J8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
IS61QDPB42M36A1-550M3LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 165LFBGA |
|
MT29F256G08AUCDBJ6-6IT:D TRMicron Technology |
IC FLASH 256GBIT PAR 132LBGA |