English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SXUV |
| 包裹: | Tray |
| 零件状态: | Active |
| 波长: | - |
| 色彩增强: | - |
| 光谱范围: | - |
| 二极管型: | - |
| 响应度@nm: | - |
| 响应时间: | - |
| 电压 - 直流反向 (vr) (max): | 150 V |
| 当前 - 黑暗（典型）: | 100nA |
| 活动区域: | 19.7mm² |
| 可视角度: | - |
| 工作温度: | -10°C ~ 40°C |
| 安装类型: | Through Hole |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AXUV63HS1Opto Diode Corporation |
SENSOR ELECTRON DETECTION 9MM |
|
VTP413HExcelitas Technologies |
SENSOR PHOTODIODE 925NM RADIAL |
|
SLSD-71N700Luna Optoelectronics (Advanced Photonix) |
SENSOR PHOTODIODE 940NM RECT |
|
PDV-C173SMLuna Optoelectronics (Advanced Photonix) |
SENSOR PHOTODIODE 900NM 2SMD |
|
MTPD3650D-1.4Marktech Optoelectronics |
SENSOR PHOTODIODE 365NM TO46 |
|
BPV10Vishay / Semiconductor - Opto Division |
PHOTODIODE 350 TO 1120 NM |
|
VTP9812FHExcelitas Technologies |
SENSOR PHOTODIODE 580NM RADIAL |
|
A5C-38OSI Optoelectronics |
38-ELEMENT SILICON PHOTODIODE AR |
|
ODD-5WBISOLOpto Diode Corporation |
SENSOR PHOTODIODE 940NM TO5 |
|
AXUV100ALOpto Diode Corporation |
SENSOR ELECTRON DETECTION 100MM |
|
BP104Vishay / Semiconductor - Opto Division |
SENSOR PHOTODIODE 950NM 2DIP |
|
IN-S32GTNPDInolux |
TOP VIEW / 3527 / 3.2X2.7X1.1 |
|
OPF422TT Electronics / Optek Technology |
SENSOR PHOTODIODE 880NM TO46 |
