English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.1A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 500mOhm @ 3.1A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 12 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 270 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta), 25W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
HUF76419S3ST_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDD86102LZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 8A/35A DPAK |
|
STU9N65M2STMicroelectronics |
MOSFET N-CH 650V 5A IPAK |
|
SD211DE TO-72 4LLinear Integrated Systems, Inc. |
HIGH SPEED N-CHANNEL LATERAL DMO |
|
IRFP4368PBFIR (Infineon Technologies) |
MOSFET N-CH 75V 195A TO247AC |
|
NTD70N03RT4Rochester Electronics |
MOSFET N-CH 25V 10A/32A DPAK |
|
AUIRF7648M2TRIR (Infineon Technologies) |
MOSFET N-CH 60V 14A DIRECTFET |
|
FQPF7P20Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 5.2A TO220F |
|
HUF76633S3SRochester Electronics |
MOSFET N-CH 100V 39A D2PAK |
|
STI20N65M5STMicroelectronics |
MOSFET N-CH 650V 18A I2PAK |
|
IXTH3N150Wickmann / Littelfuse |
MOSFET N-CH 1500V 3A TO247 |
|
IXFX38N80Q2Wickmann / Littelfuse |
MOSFET N-CH 800V 38A PLUS247-3 |
|
DMN65D8LW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 300MA SOT323 |
