English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 55A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 26mOhm @ 29A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 140 nC @ 5 V |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | 3700 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQU2N100TUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 1000V 1.6A IPAK |
|
2SK3816-DL-1ERochester Electronics |
MOSFET N-CH 60V 40A TO263-2 |
|
HUFA76629D3SRochester Electronics |
MOSFET N-CH 100V 20A TO252AA |
|
IRF60SC241ARMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 360A TO263-7 |
|
ZVP0545GTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 450V 75MA SOT223 |
|
DMN3032LE-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 5.6A SOT223 |
|
IPU60R600C6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
RS1L145GNTBROHM Semiconductor |
MOSFET N-CH 60V 14.5A/47A 8HSOP |
|
STB20NM50FDT4STMicroelectronics |
MOSFET N-CH 500V 20A D2PAK |
|
IXTA34N65X2-TRLWickmann / Littelfuse |
MOSFET N-CH 650V 34A TO263 |
|
STD2NK90ZT4STMicroelectronics |
MOSFET N-CH 900V 2.1A DPAK |
|
BSC0302LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 120V 12A/99A TDSON |
|
NTE2388NTE Electronics, Inc. |
MOSFET N-CHANNEL 200V 18A TO220 |
