English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 8A (Ta), 8A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 21mOhm @ 4A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 118 nC @ 10 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 4085 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 4.2W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 6-TSOP |
| 包/箱: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TSM033NA03CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 30V 129A 8PDFN |
|
NDDL01N60Z-1GRochester Electronics |
MOSFET N-CH 600V 800MA IPAK |
|
AOI2N60AAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 2A TO251A |
|
SPP21N50C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 500V 21A TO220-3 |
|
NTP095N65S3HFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 36A TO220-3 |
|
SQJA62EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 60A PPAK SO-8 |
|
UPA2700GR-E1-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPW50R280CEFKSA1Rochester Electronics |
MOSFET N-CH 500V 13A TO247-3 |
|
IRFB18N50KPBFVishay / Siliconix |
MOSFET N-CH 500V 17A TO220AB |
|
STB80NF10T4STMicroelectronics |
MOSFET N-CH 100V 80A D2PAK |
|
BSC119N03MSCGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SI2307BDS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 2.5A SOT23-3 |
|
IPP028N08N3GHKSA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
