类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | 8.1A (Tc) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | Surface Mount |
供应商设备包: | D²PAK (TO-263) |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NVMFS5C460NLAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 21A/78A 5DFN |
|
IPI120N08S403AKSA1Rochester Electronics |
MOSFET N-CH 80V 120A TO262-3-1 |
|
SPA04N50C3XKSA1Rochester Electronics |
MOSFET N-CH 560V 4.5A TO220-FP |
|
PSMN014-80YL115Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STW32N65M5STMicroelectronics |
MOSFET N-CH 650V 24A TO247-3 |
|
NTD4910N-35GRochester Electronics |
MOSFET N-CH 30V 8.2A/37A IPAK |
|
CSD19502Q5BTTexas Instruments |
MOSFET N-CH 80V 100A 8VSON |
|
SIR872ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 150V 53.7A PPAK SO-8 |
|
AON7262EAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 21A/34A 8DFN |
|
DMG3407SSN-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 4A SC59 |
|
AUIRLR3410IR (Infineon Technologies) |
MOSFET N-CH 100V 17A DPAK |
|
IRL40SC228IR (Infineon Technologies) |
MOSFET N-CH 40V 557A D2PAK |
|
AON6224Alpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 100V 34A 8DFN |