类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 25A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 7.75mOhm @ 15A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 20 nC @ 4.5 V |
vgs (最大值): | +20V, -16V |
输入电容 (ciss) (max) @ vds: | 1765 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | 31W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® ChipFet Single |
包/箱: | PowerPAK® ChipFET™ Single |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AOWF20S60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 20A TO262F |
|
FQPF5P10Rochester Electronics |
MOSFET P-CH 100V 2.9A TO220F |
|
AOW12N50Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 12A TO262 |
|
IRF9Z20Vishay / Siliconix |
MOSFET P-CH 50V 9.7A TO220AB |
|
APT5010B2VRGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 47A T-MAX |
|
IRFP460BPBFVishay / Siliconix |
MOSFET N-CH 500V 20A TO247AC |
|
IRFR120PBF-BE3Vishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
|
FQP7P06Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 7A TO220-3 |
|
FCD600N60ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 7.4A DPAK |
|
BUK98150-55135Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPU80R2K0P7AKMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 3A TO251-3 |
|
STQ1NK60ZR-APSTMicroelectronics |
MOSFET N-CH 600V 300MA TO92-3 |
|
IQE006NE2LM5CGATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 41A/298A IPAK |