English
简体中文
MOSFET N-CH 800V 3A TO251-3
CONN PROTECTIVE COVER 11 OLIVE
COPPER PATCH CORD, CAT 6A (SD),
CRYSTAL 24.0000MHZ 20PF SMD
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ P7 |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 800 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 2Ohm @ 940mA, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 50µA |
| 栅极电荷 (qg) (max) @ vgs: | 9 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 175 pF @ 500 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 24W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TO251-3 |
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STQ1NK60ZR-APSTMicroelectronics |
MOSFET N-CH 600V 300MA TO92-3 |
|
IQE006NE2LM5CGATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 41A/298A IPAK |
|
FDS6612ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 8.4A 8SOIC |
|
NP82N055NUG-S18-AYRochester Electronics |
MOSFET N-CH 55V 82A TO262 |
|
IPN80R4K5P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 1.5A SOT223 |
|
STH270N8F7-2STMicroelectronics |
MOSFET N-CH 80V 180A H2PAK |
|
NTF5P03T3GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 3.7A SOT223 |
|
IRFR7746PBFRochester Electronics |
HEXFET POWER MOSFET |
|
IXTT30N60L2Wickmann / Littelfuse |
MOSFET N-CH 600V 30A TO268 |
|
STL140N4LLF5STMicroelectronics |
MOSFET N-CH 40V 140A POWERFLAT |
|
PSMN2R7-30BL,118Nexperia |
MOSFET N-CH 30V 100A D2PAK |
|
STB34N65M5STMicroelectronics |
MOSFET N-CH 650V 28A D2PAK |
|
SI3430DV-T1-E3Vishay / Siliconix |
MOSFET N-CH 100V 1.8A 6TSOP |