类型 | 描述 |
---|---|
系列: | aMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Not For New Designs |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 11A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 399mOhm @ 3.8A, 10V |
vgs(th) (最大值) @ id: | 4.1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 11 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 545 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 208W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-252, (D-Pak) |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF100B202IR (Infineon Technologies) |
MOSFET N-CH 100V 97A TO220AB |
|
STD5NM60T4STMicroelectronics |
MOSFET N-CH 600V 5A DPAK |
|
IXTA3N120-TRRWickmann / Littelfuse |
MOSFET N-CH 1200V 3A TO263 |
|
MMSF7N03HDR2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTLUS3A18PZCTCGRochester Electronics |
MOSFET P-CH 20V 5.1A 6UDFN |
|
SISS71DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 100V 23A PPAK1212-8S |
|
IPLK70R750P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 700V TDSON-8 |
|
IRLR7807ZPBFRochester Electronics |
HEXFET POWER MOSFET |
|
AON6260Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 41A/85A 8DFN |
|
FDI150N10Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 57A I2PAK |
|
PH8230E,115Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 6 |
|
APT58F50JRoving Networks / Microchip Technology |
MOSFET N-CH 500V 58A ISOTOP |
|
FCP170N60Rochester Electronics |
MOSFET N-CH 600V 22A TO220-3 |