English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 150 V |
| 电流 - 连续漏极 (id) @ 25°c: | 32A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 8V, 10V |
| rds on (max) @ id, vgs: | 30mOhm @ 16A, 10V |
| vgs(th) (最大值) @ id: | 4.6V @ 32µA |
| 栅极电荷 (qg) (max) @ vgs: | 13 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 950 pF @ 75 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 62.5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TSDSON-8-FL |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTS4409NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 700MA SC70-3 |
|
FDFMA3N109Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 2.9A 6MICROFET |
|
IPP60R199CPXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 16A TO220-3 |
|
SI2318DS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 3A SOT23-3 |
|
SI4894BDY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 8.9A 8SO |
|
IRF830AVishay / Siliconix |
MOSFET N-CH 500V 5A TO220AB |
|
IPW65R019C7FKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 75A TO247-3 |
|
2N7002KA-TPMicro Commercial Components (MCC) |
MOSFET N-CH 60V 340MA SOT23 |
|
FQP32N12V2Rochester Electronics |
MOSFET N-CH 120V 32A TO220-3 |
|
IPD60R280CFD7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 9A TO252-3 |
|
IXTQ120N20PWickmann / Littelfuse |
MOSFET N-CH 200V 120A TO3P |
|
SPB17N80C3ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 17A TO263-3 |
|
SIHG47N60E-E3Vishay / Siliconix |
MOSFET N-CH 600V 47A TO247AC |
