类型 | 描述 |
---|---|
系列: | PolarHT™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 200 V |
电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 22mOhm @ 500mA, 10V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 152 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 6000 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 714W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-3P |
包/箱: | TO-3P-3, SC-65-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SPB17N80C3ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 17A TO263-3 |
|
SIHG47N60E-E3Vishay / Siliconix |
MOSFET N-CH 600V 47A TO247AC |
|
IXTH96N25TWickmann / Littelfuse |
MOSFET N-CH 250V 96A TO247 |
|
FDD8874Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 3 |
|
VS-FC270SA20Vishay General Semiconductor – Diodes Division |
MOSFET N-CH 200V 287A SOT227 |
|
APT5010B2FLLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 46A T-MAX |
|
PH2525L,115Rochester Electronics |
MOSFET N-CH 25V 100A LFPAK56 |
|
STB270N4F3STMicroelectronics |
MOSFET N-CH 40V 160A D2PAK |
|
SI2321-TPMicro Commercial Components (MCC) |
MOSFET P-CH 20V 2.9A SOT23 |
|
SIHB33N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 33A D2PAK |
|
SI3460BDV-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 8A 6TSOP |
|
AO4405EAlpha and Omega Semiconductor, Inc. |
MOSFET P-CHANNEL 30V 6A 8SOIC |
|
DMTH4005SPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 20.9A PWRDI5060 |