类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 450 V |
电流 - 连续漏极 (id) @ 25°c: | 7A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1.1Ohm @ 3.5A, 10V |
vgs(th) (最大值) @ id: | 4V @ 1µA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 720 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 35W (Tc) |
工作温度: | - |
安装类型: | Through Hole |
供应商设备包: | TO-220F |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RM1216Rectron USA |
MOSFET P-CHANNEL 12V 16A 6DFN |
|
IRFR1205TRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 44A DPAK |
|
STP13N80K5STMicroelectronics |
MOSFET N-CH 800V 12A TO220 |
|
HUF76443P3Rochester Electronics |
MOSFET N-CH 60V 75A TO220-3 |
|
ATP207-TL-HRochester Electronics |
MOSFET N-CH 40V 65A ATPAK |
|
2SK1957-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
SSM3J378R,LXHFToshiba Electronic Devices and Storage Corporation |
AECQ MOSFET PCH -20V -6A SOT23F |
|
NTD3055L170-1GRochester Electronics |
MOSFET N-CH 60V 9A IPAK |
|
IPP60R190P6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 20.2A TO220-3 |
|
NVMYS025N06CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 8.5A/21A 4LFPAK |
|
IRF840Rochester Electronics |
MOSFET N-CH 500V 8A TO220AB |
|
PSMN3R3-80BS,118Nexperia |
MOSFET N-CH 80V 120A D2PAK |
|
APT8030LVRGRoving Networks / Microchip Technology |
MOSFET N-CH 800V 27A TO264 |