类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, U-MOSVI |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 6A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.5V, 4.5V |
rds on (max) @ id, vgs: | 29.8mOhm @ 3A, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 12.8 nC @ 4.5 V |
vgs (最大值): | +6V, -8V |
输入电容 (ciss) (max) @ vds: | 840 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 1W (Ta) |
工作温度: | 150°C |
安装类型: | Surface Mount |
供应商设备包: | SOT-23F |
包/箱: | SOT-23-3 Flat Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTD3055L170-1GRochester Electronics |
MOSFET N-CH 60V 9A IPAK |
|
IPP60R190P6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 20.2A TO220-3 |
|
NVMYS025N06CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 8.5A/21A 4LFPAK |
|
IRF840Rochester Electronics |
MOSFET N-CH 500V 8A TO220AB |
|
PSMN3R3-80BS,118Nexperia |
MOSFET N-CH 80V 120A D2PAK |
|
APT8030LVRGRoving Networks / Microchip Technology |
MOSFET N-CH 800V 27A TO264 |
|
IMBF170R450M1XTMA1IR (Infineon Technologies) |
SICFET N-CH 1700V 9.8A TO263-7 |
|
FDS2070N3Rochester Electronics |
MOSFET N-CH 150V 4.1A 8SO |
|
NTR4503NT3GRochester Electronics |
MOSFET N-CH 30V 1.5A SOT23-3 |
|
2SK4125Rochester Electronics |
MOSFET N-CH 600V 17A TO3PB |
|
FQP8N60CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 7.5A TO220-3 |
|
IPP052NE7N3GRochester Electronics |
IPP052NE7 - 12V-300V N-CHANNEL P |
|
IPS70R2K0CEAKMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 4A TO251-3 |