English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | π-MOSVI |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 100mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 4V |
| rds on (max) @ id, vgs: | 4Ohm @ 10mA, 4V |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 7.8 pF @ 3 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 200mW (Ta) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | USV |
| 包/箱: | 5-TSSOP, SC-70-5, SOT-353 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPI77N06S3-09Rochester Electronics |
MOSFET N-CH 55V 77A TO262-3 |
|
IPP65R110CFDXKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 31.2A TO220-3 |
|
C2M0040120DWolfspeed - a Cree company |
SICFET N-CH 1200V 60A TO247-3 |
|
FDMC7572SRochester Electronics |
MOSFET N-CH 25V 22.5A/40A PWR33 |
|
STB38N65M5STMicroelectronics |
MOSFET N-CH 650V 30A D2PAK |
|
DMP2038USS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 6.5A 8SO |
|
FDN363NRochester Electronics |
N-CHANNEL POWER MOSFET |
|
BUK754R3-40B,127Rochester Electronics |
PFET, 75A I(D), 40V, 0.0043OHM, |
|
IRF634PBFVishay / Siliconix |
MOSFET N-CH 250V 8.1A TO220AB |
|
R6012ANXROHM Semiconductor |
MOSFET N-CH 600V 12A TO220FM |
|
TK32A12N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 120V 32A TO220SIS |
|
BSO033N03MSGXUMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 17A 8DSO |
|
FDD8451Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 9A/28A DPAK |
