English
简体中文
1/2"FLTSNAP RD120VAC W/LEADS
MEMS OSC XO 19.2000MHZ H/LV-CMOS
MOSFET N-CH 600V 12A TO220FM
IDC CABLE - MKC34K/MC34M/MCF34K
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 12A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 420mOhm @ 6A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 35 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1300 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 50W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220FM |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TK32A12N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 120V 32A TO220SIS |
|
BSO033N03MSGXUMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 17A 8DSO |
|
FDD8451Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 9A/28A DPAK |
|
IPD50R800CERochester Electronics |
IPD50R800 - 500V COOLMOS N-CHANN |
|
APT60M75L2LLGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 73A 264 MAX |
|
RCD100N19TLROHM Semiconductor |
MOSFET N-CH 190V 10A CPT3 |
|
TK5A65DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 4.5A TO220SIS |
|
NTMFS4H01NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 54A/334A 5DFN |
|
NTMFS5C426NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 41A/235A 5DFN |
|
TK155A65Z,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 18A TO220SIS |
|
AOWF7S60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 7A TO262F |
|
YJD45G10A-F1-0000HF |
N-CH MOSFET 100V 45A TO-252 |
|
IRLU120NPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 10A IPAK |