类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 12 V |
电流 - 连续漏极 (id) @ 25°c: | 32A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 2.5V, 4.5V |
rds on (max) @ id, vgs: | 6mOhm @ 15A, 4.5V |
vgs(th) (最大值) @ id: | 1.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 164 nC @ 4.5 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 10015 pF @ 6 V |
场效应管特征: | - |
功耗(最大值): | 83W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® SO-8 |
包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF6215STRRPBFRochester Electronics |
MOSFET P-CH 150V 13A D2PAK |
|
TPN4R303NL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 40A 8TSON |
|
BUK7Y21-40EXNexperia |
MOSFET N-CH 40V 33A LFPAK56 |
|
SSM3K72CFS,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 170MA SSM |
|
FQB45N15V2TMRochester Electronics |
MOSFET N-CH 150V 45A D2PAK |
|
IXTA20N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 20A TO263 |
|
TSM3443CX6 RFGTSC (Taiwan Semiconductor) |
MOSFET P-CHANNEL 20V 4.7A SOT26 |
|
PHD108NQ03LT,118Rochester Electronics |
MOSFET N-CH 25V 75A DPAK |
|
GAN063-650WSAQNexperia |
GANFET N-CH 650V 34.5A TO247-3 |
|
NTGS3441PT1GRochester Electronics |
MOSFET P-CH 20V 1.8A 6TSOP |
|
IPL60R075CFD7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 33A 4VSON |
|
STF5N52K3STMicroelectronics |
MOSFET N-CH 525V 4.4A TO220FP |
|
HUF75939P3Rochester Electronics |
MOSFET N-CH 200V 22A TO220-3 |